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DMJ70H900HJ3

Manufacturers: Diodes Incorporated
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: DMJ70H900HJ3
Description: MOSFET BVDSS: 651V 800V TO251
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Transistors - FETs, MOSFETs - Single
Series Automotive, AEC-Q101
FET Type N-Channel
Packaging Tube
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Through Hole
Package / Case TO-251-3, IPak, Short Leads
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 900mOhm @ 1.5A, 10V
Power Dissipation (Max) 68W (Tc)
Supplier Device Package TO-251
Gate Charge (Qg) (Max) @ Vgs 18.4nC @ 10V
Drain to Source Voltage (Vdss) 700V
Input Capacitance (Ciss) (Max) @ Vds 603pF @ 50V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V

In Stock 0 pcs

Refrence Price ($) 1 pcs 100 pcs 500 pcs
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